Low capacitance floating diffusion structure for a solid state i

Details Low capacitance floating diffusion structure for a solid state i Low capacitance floating diffusion structure for a solid state i

1996-06-27

1997-04-15

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257239, 257223, H01L 27148

Patent

active

056212305

ABSTRACT:
A method for producing a low capacitance floating diffusion structure used for charge to voltage conversion in a solid state image sensor having an output amplifier provided with a gate electrode, comprising the steps of: (a) growing a gate oxide on a substrate of a given conductivity type; (b) forming the gate electrode for the output amplifier on the gate oxide and patterning the gate electrode so as to create an opening through it; (c) introducing through the opening a dopant of a conductivity type opposite to the given conductivity type so as to create a floating diffusion region in the substrate; and (d) creating an ohmic contact between the floating diffusion region and the gate electrode.

REFERENCES:
patent: 4594604 (1986-06-01), Kub
patent: 5151380 (1992-09-01), Hynecek
patent: 5341008 (1994-08-01), Hynecek
Miwada et al, A 100 MHZ Data Rate, 5000-Element CCD Linear Image Sensor with Reset Pulse Level Adjustment Circuit, IEEE International Solid State Circuits Conference 1992, pp. 168-169, 275 no month.

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