Low-capacitance electrostatic discharge protection diodes

Details Low-capacitance electrostatic discharge protection diodes Low-capacitance electrostatic discharge protection diodes

2002-12-31

2010-12-07

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S328000, C257S355000, C257S546000, C257SE31005, C327S565000, C327S586000

Reexamination Certificate

active

07847317

ABSTRACT:
A reduced capacitance diode. A first conductive layer provides conductive interconnects for pad and supply diffusion regions in a diode. A second conductive layer includes a first portion to couple the pad diffusion regions to a pad and a second portion to couple the supply diffusion regions to a voltage supply. Lines of the first and second conductive layers are substantially parallel to each other in a diode region of the diode. Further, for one aspect, a tap for the diode to be coupled to a supply is wider than a minimum width.

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Worley, Eugene R. at al., “Optimization of Input Protection Diode for High Speed Applications”, Proceedings of the 24thAnnual EOS/ESD Symposium, pp. 62-72, Charlotte, NC (Oct. 6-10, 2002).
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JPO, “First Office Action”, Japanese Application No. 2004-565301, Mailed Jun. 23, 2009, 4 pages.

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