Low capacitance avalanche photodiode

Details Low capacitance avalanche photodiode Low capacitance avalanche photodiode

2006-05-23

2006-05-23

Owens, Douglas W (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S189000

Reexamination Certificate

active

07049640

ABSTRACT:
An avalanche photodiode having a reduced capacitance is provided. The avalanche photodiode includes a wide band gap layer in its depletion region. The width of the wide band gap layer increases the extent of the depletion region, thereby reducing the capacitance while minimizing the impact on the dark current.

REFERENCES:
patent: 6326649 (2001-12-01), Chang et al.
patent: 6730979 (2004-05-01), Boisvert

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