Low capacitance amorphous silicon field effect transistor struct

Details Low capacitance amorphous silicon field effect transistor struct Low capacitance amorphous silicon field effect transistor struct

1985-08-02

1987-08-11

Clawson, Jr., Joseph E.

357 4, 357 59, H01L 2978

Patent

active

046865535

ABSTRACT:
An amorphous silicon thin film FET is structured to be particularly useful for use in liquid crystal display circuits. In particular, critical FET dimensions are provided which permit optimal reduction of source to gate capacitance, while at the same time, preventing the occurrence of large contact voltage drops. Critical dimensions include active channel length, source-gate overlap, and amorphous silicon thickness. A critical relationship is established amongst these parameters.

REFERENCES:
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"Application of Amorphous Silicon Field Effect Transistors in Addressable Liquid Crystal Display Panels", by A. J. Snell et al., Applied Physics, vol. 24, pp. 357-362 (1981).
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