Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1996-10-16
1999-08-17
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257198, 257623, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
059397381
ABSTRACT:
A method for fabricating a bipolar transistor comprising the steps of: implanting portions 320 of a semiconductor material structure with ions to render the portions semi-insulating; forming an emitter contact region 332 at an exposed surface of a base layer 308 in a non-implanted portion of the material structure; forming an epitaxial layer of semiconductor material 322 over the exposed surface in an implanted portion of the material structure; and forming a base contact 330 over said epitaxial layer. In accordance with one embodiment of the invention, the method includes the further step of forming a second epitaxial layer of semiconductor material 324 over the first epitaxial layer 322 and then forming the base contact 330 on the second epitaxial layer 324. In accordance with another embodiment, the method includes the further step of forming a second layer of epitaxial material over the exposed surface prior to forming the epitaxial layer of semiconductor material. The base layer may be GaAs and the epitaxial of semiconductor material may be AlGaAs. The second epitaxial layer may also be GaAs.
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S. Tiwari, et al., "Surface Recombination in GaA1As/GaAs Heterostructure Bipolar Transistors", Journal of Applied Physics, vol. 64, No. 10, pp. 5009-5012, Nov. 15, 1988.
Won-Seong Lee, et al., Effect of Emitter-Base Spacing on the current Gain of A1GaAs/GaAs Heterojunction Bipolar Transistors, IEEE Electron Device Letters, vol. 10, No. 5, May 1989.
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O. Nakajima, et al., "Emitter-Base Junction Size Effect on Current Gain H.sub.fe of AlGaAs/GaAs Heterojunction Bipolar Transistors", Japanese Journal of Applied Physics, vol. 24, No. 8, pp. L596-L598, Aug. 1985.
Donaldson Richard L.
Maginniss Christopher L.
Mintel William
Skrehot Michael K.
Texas Instruments Incorporated
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