Low base resistance bipolar junction transistor array

Details Low base resistance bipolar junction transistor array Low base resistance bipolar junction transistor array

2011-01-04

2011-01-04

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With non-planar semiconductor surface

C257S587000, C257S588000, C257SE27055

Reexamination Certificate

active

07863709

ABSTRACT:
Methods and apparatuses directed to low base resistance bipolar junction transistor (BJT) devices are described herein. A low base resistance BJT device may include a collector layer, a base layer formed on the collector layer, a plurality of isolation trench lines formed in the base layer and extending into the collector layer, and a plurality of polysilicon lines formed on the base layer parallel to and overlapping the plurality of isolation trench lines. The base layer may be N-doped or P-doped.

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patent: 4392149 (1983-07-01), Horng et al.
patent: 4446476 (1984-05-01), Isaac et al.
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patent: 4541168 (1985-09-01), Galie et al.
patent: 5747846 (1998-05-01), Iida et al.

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