Low base-emitter voltage heterojunction bipolar transistor

Details Low base-emitter voltage heterojunction bipolar transistor Low base-emitter voltage heterojunction bipolar transistor

2005-02-15

2005-02-15

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S188000, C257S189000, C257S190000, C438S312000, C438S317000, C438S343000

Reexamination Certificate

active

06855948

ABSTRACT:
A heterojunction bipolar transistor is presented, comprising a substrate having formed thereon a heterojunction bipolar transistor layer structure, and including an emitter layer. The emitter layer includes a strained, n-doped compound of indium arsenic and phosphorus. The transistor further comprises, between the substrate and emitter layer, a subcollector layer, a collector layer, a base layer, and an optional spacer layer. The emitter layer may include a graded portion. A contact layer is formed on the emitter layer to provide contacts for the device.

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