Low barrier ohmic contact for semiconductor light emitting devic

Details Low barrier ohmic contact for semiconductor light emitting devic Low barrier ohmic contact for semiconductor light emitting devic

1998-09-28

2000-07-11

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257190, 257191, 257 78, 257 96, 257 97, 257103, 257201, H01L 3300

Patent

active

060877251

ABSTRACT:
On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.

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