Low-barrier-height epitaxial Ge-GaAs mixer diode

Details Low-barrier-height epitaxial Ge-GaAs mixer diode Low-barrier-height epitaxial Ge-GaAs mixer diode

1980-05-08

1982-02-16

Edlow, Martin H.

357 16, H01L 2948

Patent

active

043162010

ABSTRACT:
A high-frequency (9.3 GH.sub.z -94 GH.sub.z) gallium arsenide (GaAs) mixer iode having a low Schottky barrier height (approximately 0.4 eV) for operating at low noise figure levels at low local oscillator power levels (0.25 mW -0.75 mW), includes a GaAs substrate, a thin (about 100 A) epitaxial layer of germanium on the substrate, the epitaxial germanium being deposited at a rate of about 6 A per minute and at a substrate temperature in the range of 325.degree. C.-425.degree. C., a layer of silicon dioxide (SiO.sub.2), the SiO.sub.2 being etched, and layers of platinum-titanium-molybdenum-gold on the growth of epitaxial germanium. Contact areas are then plated with a layer of gold. Ohmic contact to the GaAs substrate side includes a deposition of gold-germanium alloy. Each of the layers are individually deposited at certain temperatures and thicknesses in a vacuum.

REFERENCES:
patent: 4179533 (1979-12-01), Christou
patent: 4197551 (1980-03-01), Adlerstein
patent: 4201999 (1980-05-01), Howard
patent: 4226649 (1980-10-01), Davey

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