Low angle, low energy physical vapor deposition of alloys

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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20419212, 20419217, 438658, 438664, 438683, C23C 1434

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active

058633936

ABSTRACT:
An alloy or composite is deposited in a recess feature of a semiconductor substrate by sputtering an alloy or composite target into a recess, to form a first layer of deposited material. The first layer of deposited material is resputtered at a low angle and low energy, to redeposit the first layer of deposited material onto the bottom of the recess as a second layer of deposited material having a different stoichiometry than that of the first deposited material. In a further embodiment, a sputtering chamber ambient is comprised of argon and nitrogen. In yet a further embodiment, the resputtering step is followed by deposition of at least one layer of material with a different stoichiometry than that of the second deposited layer, to form a "graded" stoichiometry of material deposited in the recess.

REFERENCES:
patent: 4717462 (1988-01-01), Homma et al.
patent: 4724060 (1988-02-01), Sakata et al.
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 4834856 (1989-05-01), Wehner
patent: 4874493 (1989-10-01), Pan
patent: 4983547 (1991-01-01), Arima et al.
patent: 5114556 (1992-05-01), Lamont, Jr.
patent: 5302266 (1994-04-01), Grabarz et al.
patent: 5482611 (1996-01-01), Helmer et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5525543 (1996-06-01), Chen
Clarke, A., "Low-Angle Sidewall Planarization", Semiconductor International, vol. 18, No. 9, 1, (Aug., 1995).
Ogawa, S., et al., "Dependence of Thermal Stability of the Titanium Silicide/Silicon Structure on Impurities", Applied Physics Letters, vol. 56, No. 8, 725-727, (Feb. 19, 1990).
Wehner, G.K., "The Aspects of Sputtering in Surface Analysis Methods", Methods of Surface Analysis, Elsevier Scientific, vol. 1, 5-37, (1975).

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