Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1996-07-08
1998-03-10
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
20419217, 438658, 438664, 438683, C23C 1434
Patent
active
057257396
ABSTRACT:
An alloy or composite is deposited in a recess feature of a semiconductor substrate by sputtering an alloy or composite target into a recess, to form a first layer of deposited material. The first layer of deposited material is resputtered at a low angle and low energy, to redeposit the first layer of deposited material onto the bottom of the recess as a second layer of deposited material having a different stoichiometry than that of the first deposited material. In a further embodiment, a sputtering chamber ambient is comprised of argon and nitrogen. In yet a further embodiment, the resputtering step is followed by deposition of at least one layer of material with a different stoichiometry than that of the second deposited layer, to form a "graded" stoichiometry of material deposited in the recess.
REFERENCES:
patent: 4717462 (1988-01-01), Homma et al.
patent: 4724060 (1988-02-01), Sakata et al.
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 4834856 (1989-05-01), Wehner
patent: 4874493 (1989-10-01), Pan
patent: 4983547 (1991-01-01), Arima et al.
patent: 5114556 (1992-05-01), Lamont, Jr.
patent: 5302266 (1994-04-01), Grabarz et al.
patent: 5482611 (1996-01-01), Helmer et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5525543 (1996-06-01), Chen
Andy Clarke, "Low-Angle Sidewall Planarization", Semiconductor International, vol. 18, No. 9, 1, (Aug., 1995).
Shin-ichi Ogawa, et al., "Dependence of Thermal Stability of the Titanium Silicide/Silicon Structure on Impurities", Applied Physics Letters, vol. 56, No. 8, 725-727, (Feb. 19, 1990).
G. K. Wehner, "The Aspects of Sputtering in Surface Analysis Methods", Methods of Surface Analysis, Elsevier Scientific, vol. 1, 5-37, (1975).
Micro)n Technology, Inc.
Weisstuch Aaron
LandOfFree
Low angle, low energy physical vapor deposition of alloys does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low angle, low energy physical vapor deposition of alloys, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low angle, low energy physical vapor deposition of alloys will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-136266