Low absorption coatings for infrared laser optical elements

Optical: systems and elements – Having significant infrared or ultraviolet property – Multilayer filter or multilayer reflector

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359356, 359589, 359584, G02B 528, G02B 1314, F21V 904

Patent

active

060209925

ABSTRACT:
A thorium-free low absorption coating for infrared CO.sub.2 laser optics comprises an interior BaF.sub.2 layer formed on a substrate and an exterior layer formed over the interior layer to a predetermined thickness sufficient to substantially prevent water adsorption by the interior layer. Generally, the predetermined thickness is greater than about 11000 .ANG., and in one embodiment of a two-layer low absorption coating designed for antireflection at 10.6 microns, the exterior layer has a physical thickness in a range between about 24600 .ANG. and 22800 .ANG., and preferably about 24000 .ANG.. In the preferred two-layer AR coating embodiment, the exterior layer defines a cover layer and an absentee layer, and the interior layer is relatively thin. The preferred exterior layer and the preferred substrate consist essentially of ZnSe. Multilayer stacked coatings of more than two layer can also be formed to provide low absorption partially reflective or totally reflective coatings as well as AR coatings.

REFERENCES:
patent: 4735488 (1988-04-01), Rancourt et al.
patent: 5506038 (1996-04-01), Knapp et al.
Rahe, et al., "Absorption Calorimetry and Laser Induced Damage Threshold Measurements of AR-coated ZnSe and Metal Mirrors at 10.6 .mu.m", SPIE vol. 1441, Laser-Induced Damage in Optical Materials: 1990, pp. 113-1261.
Kaspar, et al., "Characterization of Optical Thin Films for Applications at 10.6 Micron", SPIE vol. 1270 Optical Thin Films and Applications (1990), pp. 105-115.
Kemeny, "Refractive Index of Thin Films of Barium Fluoride", Applied Optics, vol. 21, No. 11, Jun. 1, 1982, pp. 2052-2054.
"Evaporation Fluorides --The Way Forward", Patinal Newsletter, No. 5, Jun. 1996 Rahe, et al., The Effect of Hydrogen Concentration in Conventional and.

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