Low-absorption circuit device for controlling a power transistor

Details Low-absorption circuit device for controlling a power transistor Low-absorption circuit device for controlling a power transistor

1989-01-18

1990-06-05

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 323315, 330257, H03K 17687, H03K 301, G05F 316, H03F 345

Patent

active

049316761

ABSTRACT:
A low-absorption circuit device for controlling into the on state a power transistor, in particular a D MOS transistor having conventional gate, drain, and source electrodes, and adapted to drive electrical loads by changing over from an off state to an on state in which there appears on the gate electrode a predetermined voltage value, comprises a first turn-on circuit connected to one pole of a voltage supply, a second turn-on circuit connected to another supply voltage pole, and a comparator having respective inputs connected to the gate electrode of the power transistor and to a reference voltage pole as well as respective outputs connected to each respective turn-on circuit to activate said circuits alternately based on a comparison of the gate voltage of the power transistor with the predetermined reference voltage.

REFERENCES:
patent: 3496441 (1970-02-01), Heider et al.
patent: 3805093 (1974-04-01), Hodemaekers
patent: 4513178 (1985-04-01), Hing et al.
patent: 4540899 (1985-09-01), Pelly
patent: 4628249 (1986-12-01), Ikefuji et al.
patent: 4689607 (1987-08-01), Robinson
patent: 4697154 (1987-09-01), Kousaka et al.
Sun et al., "Modeling of the On-Resistance of LDMOS, VDMOS and VMOS Power Transistors", IEEE Transactions on Electron Device, vol. ED. 27, No. 2, Feb., 1980, pp. 356-367.

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