Loss-guided semiconductor lasers

Coherent light generators – Particular active media – Semiconductor

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372 46, 372 48, 372 50, H01S 319

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058125760

ABSTRACT:
The present invention relates to a short-wavelength loss-guided structure using Group III-V nitride material. Specifically, waveguiding in the lateral direction is achieved by placing a high index material in close proximity to the active layer of the laser, which gives rise to outcoupling of light from the lateral waveguides. The present invention provides higher laser beam quality and simplifies the processing technology.

REFERENCES:
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