Longitudinally coupled surface emitting semiconductor laser arra

Details Longitudinally coupled surface emitting semiconductor laser arra Longitudinally coupled surface emitting semiconductor laser arra

1987-05-11

1989-01-10

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 23, 372 97, 372 48, 372108, H01S 319

Patent

active

047978929

ABSTRACT:
A longitudinally coupled, coherent, surface emitting semiconductor laser array in a monolithic wafer is disclosed. Active regions of diode laser-striped semiconductor material are focused ion beam (FIB) micromachined to form transversely disposed channels of symmetric, opposed, generally parabolic mirrored surfaces. Diode laser pairs, emitting laser energy in a generally horizontal plane, are longitudinally injection-coupled (phase-locked) by semi-transmissive, opposed regions that are micromachined into the otherwise reflective parabolic surfaces of the channel. Coherent, laser energy is reflected thereby generally normally away from the surface of the monolithic structure.

REFERENCES:
patent: 4633476 (1986-12-01), Scifres et al.
Chow, "Two-Dimensional Phase-Locked Laser Array," National Technical Information Service (U.S. Dept. of Comm.), publication date unknown.
Evans, et al., "Surface-Emitting Second Order Distributed Bragg Reflector Laser with Dynamic Wavelength Stabilization and Far-Field Angle of 0.25.degree.," Applied Physics Letters, vol. 49, No. 6, Aug. 11, 1986, pp. 314-315.
Yang, et al., "Surface-Emitting GaAlAs/GaAs Linear Laser Arrays with Etched Mirrors," Applied Physics Letters, vol. 49, No. 18, Nov. 3, 1986, pp. 1138-1139.
(Anonymous), "RCA Laboratories Develops Surface-Emitting Diode Laser," Lasers & Applications, vol. 5, No. 11, Nov. 1986, pp. 18, 20.

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