Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-07-17
2007-07-17
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S278000, C257S331000, C257S334000, C257S368000, C257S377000, C257S664000, C257S773000, C257S903000, C257SE21661, C257SE21703, C257SE21099, C257SE27099, C257SE27112, C257SE29274
Reexamination Certificate
active
10493443
ABSTRACT:
A semiconductor memory device includes a vertical MISFET having a source region, a channel forming region, a drain region, and a gate electrode formed on a sidewall of the channel forming region via a gate insulating film. In manufacturing the semiconductor memory device, the vertical MISFET in which leakage current (off current) is less can be realized by: counter-doping boron of a conductivity type opposite to that of phosphorus diffused into a poly-crystalline silicon film (10) constituting the channel forming region from an n type poly-crystalline silicon film (7) constituting the source region of the vertical MISFET, and the above-mentioned poly-crystalline silicon film (10); and reducing an effective impurity concentration in the poly-crystalline silicon film (10).
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Haga Satoru
Kisu, legal representative Haruko
Kisu, legal representative Teruo
Kujirai Hiroshi
Matsuoka Hideyuki
Elpida Memory Inc.
Estrada Michelle
Stark Jarrett J.
LandOfFree
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