Longitudinal bipolar transistor with base region in trenches...

Details Longitudinal bipolar transistor with base region in trenches... Longitudinal bipolar transistor with base region in trenches...

2011-03-08

2011-03-08

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S197000, C257S498000, C257S566000, C257S575000, C257S587000

Reexamination Certificate

active

07902633

ABSTRACT:
Provided is a semiconductor device including: a silicon substrate; at least two trenches spaced apart from each other, being in parallel with each other, and being formed by vertically etching the silicon substrate from a surface thereof; an electrically insulating film for burying therein at least bottom surfaces of the trenches; a base region formed in a region of the silicon substrate located between the two trenches; and an emitter region and a collector region formed on portions of side surfaces of the trenches, respectively, the portions of the sides located above the insulating film and formed in the base region.

REFERENCES:
patent: 5001533 (1991-03-01), Yamaguchi
patent: 6476450 (2002-11-01), Kondo et al.
patent: 6504231 (2003-01-01), Kato
patent: 7307336 (2007-12-01), Ehwald et al.
patent: 2009/0212394 (2009-08-01), Melai et al.
patent: 52053673 (1977-04-01), None

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