Long wavelength vertical cavity surface emitting laser

Coherent light generators – Particular active media – Semiconductor

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372 96, H01S 319

Patent

active

059783982

ABSTRACT:
A VCSEL for emitting long wavelength light including a GaAs substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region. The active region including an active structure sandwiched between a first cladding region adjacent the first mirror stack, and a second cladding region. The first and second cladding regions including an AlGaAs/GaAs material system. The active structure including a nitride based quantum well and a GaAsP barrier layer. A second mirror stack is lattice matched to the second cladding region and has mirror pairs in a GaAs/AlGaAs material system.

REFERENCES:
patent: 5684823 (1997-11-01), Goto et al.
patent: 5708280 (1998-01-01), Lebby et al.
patent: 5719894 (1998-02-01), Jewell et al.
patent: 5903586 (1999-05-01), Ramdani et al.

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