Long wavelength vertical cavity surface emitting laser

Details Long wavelength vertical cavity surface emitting laser Long wavelength vertical cavity surface emitting laser

1997-07-30

1999-05-11

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, 372 96, 257 94, H01S3/19

Patent

active

059035862

ABSTRACT:
A VCSEL for emitting long wavelength light including a GaAs substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack, and a second cladding region. The first and second cladding regions including an InGaP/GaAs material system. The active structure includes a nitride based quantum well and either a GaAsP or a GaAs barrier layer. A second mirror stack is lattice matched to the second cladding region and has mirror pairs in a GaAs/AlGaAs material system.

REFERENCES:
patent: 5432809 (1995-07-01), Grodzinski et al.
patent: 5719894 (1998-02-01), Jewell et al.

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