Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1991-09-11
1994-05-10
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257 94, 257194, H01L 3300
Patent
active
053110463
ABSTRACT:
A long wavelength transmitter OEIC includes a transverse direction current injection type semiconductor laser and a high electron mobility transistor which are integrated on a semi-insulating substrate. The semiconductor laser includes at least an AlGaInAs lower cladding layer, a quantum well active layer and a high resistivity AlGaInAs upper cladding layer successively grown on the semi-insulating substrate, disordered regions formed in the quantum well active layer by diffusions of p type and n type dopants, and an active region sandwiched by the disordered regions. The transistor includes an operating layer and a carrier supplying layer both including AlGaInAs series material and formed on the high resistivity AlGaInAs upper cladding layer. This transistor uses the upper cladding layer as a leakage current preventing layer. This structure can be formed by only one epitaxial growth, resulting in low cost. In addition, since the above layers are successively grown on a flat substrate, photolithography processes for forming a gate of HEMT are performed on a flat surface, so that a fine gate pattern can be formed with high precision. As a result, a transmitter OEIC performing high speed modulation are produced.
REFERENCES:
patent: 4764796 (1988-08-01), Sasaki et al.
patent: 4766472 (1988-08-01), Brillouet et al.
patent: 4774555 (1988-09-01), Kohn et al.
patent: 4996163 (1991-02-01), Sasaki
patent: 5003359 (1991-03-01), Abeles
Suzuki et al, "Opto-Electronic Integrated Circuit At Long Wavelength", Second Optoelectronic Conference (OEC '88) Technical Digest, Oct. 1988, pp. 190-191.
Fukuzawa et al, "Monolithic Integration of A GaAlAs Injection Laser With A Schottky-Gate Field Effect Transistor", Applied Physics Letters, vol. 36, No. 3, 1980, pp. 181-182.
Crane Sara W.
Mitsubishi Denki & Kabushiki Kaisha
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