Long-wavelength semiconductor light emitting device and its...

Details Long-wavelength semiconductor light emitting device and its... Long-wavelength semiconductor light emitting device and its...

2006-04-11

2006-04-11

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S046000, C438S935000

Reexamination Certificate

active

07026183

ABSTRACT:
For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

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patent: 2003/0181024 (2003-09-01), Takeuchi et al.
patent: 10-145003 (1998-05-01), None
T. Takeuchi, et al., “MOCVD growth of InGaAsN and 1-3-μm lasers”, Photonics West 2003 Session No. 4995-08, Abstract.
James S. Harris, Jr., “GaInNAsSb long-wavelength lasers on GaAs”, Solid State and Photonics Lab, Stanford University, CIS-X 328, Proceedings of SPIE vol. 4995 (2003) SPIE-0277-786X/03, Session 4995-10.
Ralph Johnson, et al., “Long wavelength VCSELs at Honeywell”, Proceedings of SPIE vol. 4994 (2003), SPIE-0227-786X/03, Session 4995-33.

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