Long-wavelength photoemission cathode

Electric lamp and discharge devices – Geiger-mueller type

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357 3, 357 4, 357 16, 357 30, H01J 3906, H01J 3126

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active

039581438

ABSTRACT:
A long wavelength photoemitter, for example a III-V semiconductor, having a work function reduction activation layer thereon, with means for overcoming the energy barrier between the semiconductor conduction band edge and the vacuum comprising means for thermally energizing the photoexcited electrons in the conduction band from a lower energy level therein to a higher "metastable" energy level in which they may reside for a sufficient time such that the electrons can pass with high probability from the elevated energy level into the vacuum over the energy barrier. In one embodiment, promotion of electrons to this higher energy level in the conduction band results from proper selection of the semiconductor alloy with conduction band levels favoring such room temperature thermal excitation. In another embodiment, a Schottky barrier is formed between the semiconductor emitter surface and the activation layer, by means of which an internal electric field is applied to the cathode resulting in high effective electron temperature for energy level transfer analogous to the intervalley electron transfer process of the Gunn effect. In yet other embodiments, composite semiconductor bodies are fabricated in which one region may advantageously be designed for efficient absorption of long-wavelength photons, and another for efficient operation of the promotion mechanism, which together assure a high quantum efficiency. Other properties of the biased promotion layer may be used to minimize emission of electrons which have been excited by purely thermal means, thus providing a low dark current, usually considered to be incompatible with long-wavelength infrared response.

REFERENCES:
patent: 3387161 (1968-06-01), Van Laar et al.
patent: 3631303 (1971-12-01), Antypas et al.
patent: 3632442 (1972-01-01), Turnbull
patent: 3644770 (1972-02-01), Bell
patent: 3651426 (1972-03-01), Boatner et al.
patent: 3694759 (1972-09-01), Kasano et al.
patent: 3814993 (1974-06-01), Kennedy
James et al., Journal of Applied Physics, Vol. 42, No. 2, Feb. 1971, pp. 580-586.
Pankove, RCA Technical Note No. 767 Apr. 1968.
Milnes et al., Heterojunctions and Metal-Semiconductor Junctions, (Academic Press, N.Y. 1972), pp. 201-225. Metal-Semiconductor
Stolte et al., "The Schottky Barrier Cold Cathode, " Solid-State Electrons; Pergamon Press, 1969, Vol. 12, pp. 945-954.
Stolte et al., The Schottky Barrier Cold Cathode; Solid-State Electronics, Pergammon Press, 1969; Vol. 12, pp. 945-954, Great Britain; p. 945 cited.
Burnham et al., Al.sub.x Ga.sub.1.sub.-x As.sub.1.sub.-y 'P.sub.y -GaAs.sub.1.sub.- P.sub.y Heterostructure Laser and Lamp Junctions, Applied Physics Letters, Vol. 17, No. 10, Nov. 15, 1970, pp. 455-457 cited.

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