Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1998-03-26
2000-09-19
Picardat, Kevin M.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 41, 438 29, 372 96, H01L 2100
Patent
active
061210684
ABSTRACT:
A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO.sub.2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.
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Jiang Wenbin
Lebby Michael S.
Ramdani Jamal
Koch William E.
Motorola Inc.
Parsons Eugene A.
Picardat Kevin M.
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