Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-02-05
1995-03-21
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 25, 257184, 257196, 365175, H01L 2714
Patent
active
053998790
ABSTRACT:
An optical switching device is comprised of an asymmetrical double barrier resonant tunnelling diode (RTD) connected in series with load resistance apparatus to a power source, apparatus for illuminating the RTD with an infrared incident light beam, apparatus for applying signal power to the RTD, and apparatus for varying the power within the RTD.
REFERENCES:
patent: 4868418 (1989-09-01), Imamura et al.
patent: 4952792 (1990-08-01), Caridi
Liu et al., "Intersubband Photocurrent from the Quantum Well of an Asymmetrical Double-Barrier Structure," J. Appl. Phys. 70(2), 15 Jul. 1991, pp. 935-940.
Liu, "Long Wavelength Infrared Quantum Well Devices for Optical Signal Processing and Optical Processing and Optical Computing," The 2nd IEEE International Workshop on Photonics, Devices and Applications, 9-11 Mar. 1992, Montebello, Canada, pp. 1-5.
Liu et al., "Long Wavelength Infrared Photo-Induced Switching of a Resonant Tunneling Diode Using the Intersubband Transition," IEEE Electron Devices Letters, Jul., 1992, pp. 1-11.
Zou et al., "Effects of Asymmetric Barriers on Resonant Tunnelling Current," IOP Publishing, Ltd., 1988, pp. 819-822.
Bolognesi et al., "Valley Current Density Activation Energy and Effective Longitudinal Optical Phonon Energy in Triple Well Asymmetric Resonant Tunneling Diode", Appl. Phys. Lett., 57()6), 6 Aug. 1990, pp.575-577.
Mintel William
National Research Council of Canada
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