Long wavelength infrared detector with heterojunction

Details Long wavelength infrared detector with heterojunction Long wavelength infrared detector with heterojunction

1990-06-18

1991-04-30

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

357 30, H01J 4014

Patent

active

050120832

ABSTRACT:
An infrared radiation detector having a first semiconductor layer deposited n a substrate to form a diode junction with an overlay contact, is rendered more effective to detect long wavelength radiation by deposit of a second semiconductor layer between the first layer and the overlay contact in a heterojunction arrangement. The semiconductor materials are selected so as to separate radiation absorbing and electrical functions respectively performed within the two layers and to produce an enhanced output across the diode junction between the first layer and the overlay contact.

REFERENCES:
patent: 4698494 (1987-10-01), Kato et al.
patent: 4962304 (1990-10-01), Stapelbrock et al.

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