Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1990-09-25
1993-02-09
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 23, H01L 2712, H01L 29161, H01L 2714
Patent
active
051856476
ABSTRACT:
Long wavelength infrared detection is achieved by a detector made with layers of quantum well material bounded on each side by barrier material to form paired quantum wells, each quantum well having a single energy level. The width and depth of the paired quantum wells, and the spacing therebetween, are selected to split the single energy level with an upper energy level near the top of the energy wells. The spacing is selected for splitting the single energy level into two energy levels with a difference between levels sufficiently small for detection of infrared radiation of a desired wavelength.
REFERENCES:
patent: 3739385 (1980-04-01), Bethea et al.
patent: 4205331 (1980-05-01), Esaki et al.
patent: 4228365 (1980-10-01), Gutierrez et al.
patent: 4383269 (1983-05-01), Capasso
patent: 4620214 (1986-10-01), Margalit et al.
patent: 4665412 (1987-05-01), Ohkawa et al.
patent: 4679063 (1987-07-01), White
patent: 4720309 (1988-01-01), Deveaud et al.
patent: 4745452 (1988-05-01), Sollner
patent: 4806993 (1989-02-01), Voisin et al.
patent: 4894526 (1990-01-01), Bethea et al.
patent: 4903101 (1990-02-01), Maserjian
Levine, B. F., Choi, K. K., Bethea, C. G., Walker, J., Malik, R. J., "New 10 .mu.m infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices," Appl. Phys. Lett. 50(16), pp. 1092-1094, Apr. 20, 1987.
Alex Harwit and J. S. Harris, Jr., "Observation of Stark shifts in quantum well intersubband transitions," Appl. Phys. Lett. 50(11), pp. 685-687, Mar. 16, 1987.
K. K. Choi et al., "Multiple quantum well 10 .mu.m GaAs/Al.sub.x Ga.sub.1-x As infrared detector with improved responsivity," Appl. Phys. Lett. 50(25), pp. 1814-1816, Jun. 22, 1987.
L. C. West, "First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well," Appl. Phys. Lett. 46(12), pp. 1156-1158, Jun. 15, 1985.
B. F. Levine et al., "Quantum well avalanche multiplication initiated by 10 .mu.m intersubband absorption and photoexcited tunneling," Appl. Phys. Lett. 51(12), pp. 934-936, Sep. 21, 1987.
Levine, "New 10 .mu.m intrared detector using intersubband absorption . . . ", Appl. Phys. Lett. vol. 50, No. 16, Apr. 20, 1987, p. 1092.
Anderson, "Modern Physics & Quantum Mechanics", pp. 174-176.
Sze, Semiconductor Devices, Physics and Technology, pp. 252-255, .COPYRGT.1985.
G. H. Dohler, "Solid-State Superlattice", pp. 144-151 of Scientific American, Nov. 1983.
G. H. Dohler, "Doping Superlattice", pp. 851-856, American Vacuum Society, May/Jun. 1979.
James Andrew J.
Jones Thomas H.
Kusmiss John H.
Miller Guy M.
Ngo Ngan Van
LandOfFree
Long wavelength infrared detector does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Long wavelength infrared detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Long wavelength infrared detector will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-328153