Coherent light generators – Particular active media – Semiconductor
Patent
1996-07-30
1998-09-08
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 96, H01S 319, H01S 308
Patent
active
058056246
ABSTRACT:
A vertical cavity surface emitting laser (VCSEL) that generates light having a desired wavelength, greater than one micron. The laser comprises a substrate, a lower mirror region, an active region and an upper mirror region. The substrate consists essentially of GaAs. The lower mirror region is adjacent the substrate and is lattice matched to the substrate. The active region is sandwiched between the upper and lower mirror regions, and includes a central quantum well region and a gallium arsenide layer sandwiched between the quantum well region and each of the lower mirror region and the upper mirror region. The central quantum well region includes a quantum well layer consisting essentially of GaN.sub.x As.sub.(1-x). The GaN.sub.x As.sub.(1-x) of the quantum well layer has a lattice constant and a band gap dependent on x. The value of x sets the bandgap of the GaN.sub.x As.sub.(1-x) of the quantum well layer to a value corresponding to light generation at the desired wavelength, greater than one micron. Each gallium arsenide layer is a layer of a material consisting essentially of GaAs or AlGaAs, and is lattice matched to the substrate. The quantum well layer may additionally include a fraction of indium to lattice match the quantum well layer to the substrate.
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Mars Danny E.
Yang Long
Bovernick Rodney B.
Hardcastle Ian
Hewlett--Packard Company
Leung Quyen Phan
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