Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-10-02
2007-10-02
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S483000
Reexamination Certificate
active
10230895
ABSTRACT:
An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.
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Wei-Han Wang et al The Influence of Rapid Thermal Annealing on InAsP/InP Strained Multiple Quantum Well Laser Diodes Grown by Metalorganic Vapor Phase Epitaxy Compound Semiconductors 2000 IEEE international Symposium, publication date Oct. 2000.
Article entitled “1.55μm InAsP/InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy” by Zhi-Biao Hao, et al.; Jpn. J. Appl. Phys. vol. 41 (2002) pp. 754-757, Part I, No. 2A, Feb. 2002; § 2002 The Japan Society of Applied Physics.
Bour David P.
Perez William H.
Tan Michael R. T.
Avago Technologies General IP Pte Ltd
Smoot Stephen W.
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