Long wavelength, high gain InAsSb strained-layer superlattice ph

Details Long wavelength, high gain InAsSb strained-layer superlattice ph Long wavelength, high gain InAsSb strained-layer superlattice ph

1989-05-12

1991-11-12

Jackson, Jr., Jerome

357 4, 357 16, H01L 29205, H01L 2714, H01L 3106

Patent

active

050652052

ABSTRACT:
A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

REFERENCES:
patent: 4607272 (1986-08-01), Osbourn
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S. Kurtz et al., "Extended Infrared Response of InAsSb Strained-Layer Superlattices", Applied Physics Letters, vol. 52, No. 10, Mar. 7, 1988, pp. 831-833.
S. Kurtz et al., "Demonstration of an InAsSb Strained-Layer Superlattice Photodiode", Applied Physics Letters, vol. 52, No. 19, May 9, 1988, pp. 1581-1583.
G. Dohler, "Doping Superlattices (n-i-p-i Crystals)", IEEE Journal of Quantum Electronics, vol. QE-22, No. 9, 09/86, pp. 1682-1694.
R. Biefeld et al., "Strain Relief in Compositionally Graded InAsx-Sb1-x Buffer Layers and InAsxSb1-x/InSb Strained-Layer Superlattices Grown by MOCVD", Jour. of Crystal Growth, vol. 91, 1988, pp. 515-516.
Rittner, Photoconductivity Conference, Wiley, New York, 1956, pp. 233-237.
P. Kruse, Semiconductors and Semimetals, vol. 5, Academic Press, New York, 1970.
S. Kurtz et al., "InAsSb Strained-Layer Superlattices: A New Class of Far Infrared Materials", SPIE, vol. 930, Infrared Detectors and Arrays, 1988, pp. 101-113.

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