Long wavelength avalanche photodetector

Details Long wavelength avalanche photodetector Long wavelength avalanche photodetector

1981-06-19

1984-09-25

James, Andrew J.

357 13, 357 16, H01L 2714, H01L 29161, H01L 2990

Patent

active

044738358

ABSTRACT:
An avalanche photodetector useful at wavelengths as long as 1.7 microns with low noise is achieved. The crystal used includes successive layers of p-type indium phosphide, n-type indium phosphide, and n-type indium gallium arsenide. An appropriate total of fixed charges in the n-type indium phosphide and a graded bandgap heterointerface region are important for the improved results.

REFERENCES:
patent: 4144540 (1979-03-01), Bottka
patent: 4353081 (1982-10-01), Allyn et al.
patent: 4383269 (1983-05-01), Capasso
H. Kanbe et al., "InGaAs avalanche photodiode with InP p-n junction", Electronics Letters, vol. 16, No. 5 (1980) pp. 163-165.
N. Susa et al., "New InGaAs/InP avalanche photodiode structure for the 1-1.6 .mu.m wavelength region", IEEE Journal of Quantum Electronics, vol. QE-16, No. 8 (1980) pp. 864-870.
T. P. Pearsall et al., "A Ga.sub.0.47 In.sub.0.53 As/InP heterophotodiode with reduced dark current", IEEE Journal of Quantum Electronics, vol. QE-17, No. 2 (1981) pp. 255-259.
K. Taguchi et al., "InP-InGaAsP planar avalanche photodiodes with self-guard-ring effect", Electronics Letters, vol. 15 (1979) pp. 453-455.
T. Lee et al., "InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.95-1.65 .mu.m wavelength" IEEE Journal of Quantum Electronics, vol. QE-17 (1981) pp. 232-238.
N. Susa et al., "Characteristics in InGaAs/InP avalanche photodiodes with separated absorption and multiplication regions", IEEE Journal of Quantum Electronics, vol. QE-17, (1981) pp. 243-250.
M. Ito et al., "Tunneling currents in In.sub.0.53 Ga.sub.0.47 As homojunction diodes and design of InGaAs/InP hetero-structure avalanche photodiodes", Solid-State Electronics vol. 24 (1981) pp. 421-424.
Appl. Phys. Lett., vol. 37(9), Nov. 1, 1980, "Avalanche Multiplication and Noise Characteristics of Low-Dark-Current GaInAsP/InP Avalanche Photodetectors," pp. 807-810.
Appl. Phys. Lett., vol. 35(3), Aug. 1, 1979, "InGaAsP Heterostructure Avalanche Photodiodes With High Avalanche Gain," pp. 251-252.
IEEE Jr. of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981, "InGaAs/InP Separated Absorption and Multiplication Regions Avalanche Photodiode Using Liquid- and Vapor-Phase Epitaxies" pp. 250-254.

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