Long-tailed-pair connections of MOSFET's operated in sub-thresho

Details Long-tailed-pair connections of MOSFET's operated in sub-thresho Long-tailed-pair connections of MOSFET's operated in sub-thresho

1978-02-10

1980-05-06

Anagnos, Larry N.

Amplifiers

With semiconductor amplifying device

Including differential amplifier

307304, 307362, 330261, H03F 345, H03F 316, H03K 520

Patent

active

042019478

ABSTRACT:
Long-tailed pair connections of MOSFET's are used as voltage comparators, the input stages of operational amplifiers, and other circuitry where their nearly infinite gate impedances can reduce the loading upon preceding circuitry. As conventionally operated, the tail current caused to flow through the interconnected source electrodes of the MOSFET's is sufficient to bias them such that their source-to-gate voltages exceed a threshold voltage, and the input voltage offset error of the long-tailed MOSFET pair is likely to be higher than that of most long-tailed bipolar transistor pairs. By selecting a tail current that is sufficiently small to operate a long-tailed MOSFET pair such that their source-to-gate voltages are in the sub-threshold region, the MOSFET's exhibit exponential drain current versus source-to-gate characteristics which result in markedly reduced input offset voltage error.

REFERENCES:
patent: 3852679 (1974-12-01), Schade, Jr.
patent: 3956708 (1976-05-01), Musa
patent: 4048575 (1977-09-01), Musa
patent: 4050030 (1977-09-01), Russell
patent: 4060770 (1977-11-01), Schade, Jr.
Stafford et al., IEEE Journal of Solid-State Circuits, vol. -SC-9, No. 6, pp. 381-387; Dec. 1974.
Gosney, IEEE Transactions on Electron Devices, vol. ED-19, No. 2, pp. 213-219, Feb. 1972.
Troutman, IEEE Journal of Solid-State Circuits, Vol. -SC-9, No. 2, pp. 55-60; Apr. 1974.
Vittoz et al., IEEE Journal of Solid-State Circuits, vol. -SC-12, No. 3, pp. 224-231; Jun. 1977.

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