Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2004-03-05
2008-10-07
Vo, Tuyet (Department: 2821)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S011000, C257S213000, C313S1030CM, C313S104000, C313S106000
Reexamination Certificate
active
07432521
ABSTRACT:
A logical operation element and logical operation circuit are provided that are capable of high speed and a high degree of integration.A logical operation circuit has a construction wherein, in a logical operation element, the anodes of first and second field emission type microfabricated electron emitters are put at the same potential and two or more signal voltages are input to gate electrodes corresponding to these emitters. A NOR element so arranged that when a high potential input signal is input to either of the two lines, electron emission occurs from the emitters and the potential of said anodes is lowered, and a NAND element wherein the cathodes of the first and second field emission type microfabricated electron emitters are connected in series, two signal voltages are applied to the gate electrodes corresponding to the first and second emitter and the anode potential of the second emitter is lowered when the two input signals are high potential are employed.
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Imai Takahiro
Nakahara Tsuneo
Nishibayashi Yoshiki
Tatsumi Natsuo
McDermott Will & Emery LLP
Sumitomo Electric Industries Ltd.
Vo Tuyet
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