Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1998-10-15
1999-11-02
Teska, Kevin J.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
39550003, 257299, 257500, 326 80, G06F 1750, G06F 752, H03K 190175
Patent
active
059785730
ABSTRACT:
A top-down design technique is used to design a semiconductor integrated circuit having a plurality of registers and a plurality of combinational circuits each of which is connected between the registers. When a semiconductor integrated circuit is logic-synthesized from a register transistor level, a front section of a critical path-containing combinational circuit is driven by a high voltage from a high-voltage source while the remaining section and other combinational circuits with no critical path are driven by a low voltage from a low-voltage source. A level shifter is placed at the stage before the critical path-containing combinational circuit. The level shifter converts a low-voltage signal into a high-voltage one. This invention facilitates logic synthesis of a low-power semiconductor circuit without increasing the maximum signal propagation delay of the critical path and without having to provide a level shifter in a combinational circuit.
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Kik Phallaka
Matsushita Electric Industrial Co.,Ltd.
Teska Kevin J.
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