Logic structure utilizing polycrystalline silicon Schottky diode

Details Logic structure utilizing polycrystalline silicon Schottky diode Logic structure utilizing polycrystalline silicon Schottky diode

1983-09-16

1986-04-22

Larkins, William D.

357 36, 357 51, 357 59, 357 67, 357 71, 357 86, 357 92, H01L 2948, H01L 2972, H01L 2904, H01L 2348

Patent

active

045845948

ABSTRACT:
An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. A pair of Schottky diodes and a resistor are formed outside the epitaxial pocket on the silicon dioxide and connected to the pocket by doped polycrystalline silicon.

REFERENCES:
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patent: 4329706 (1982-05-01), Crowder et al.
patent: 4450470 (1984-05-01), Shiba
I. Antipov, "Fabricating Enhancement and Depletion Mode Field-Effect Transistors and Schottky Collector Bipolar Transistor", IBM Technical Disclosure Bulletin; vol. 17 (1974), pp. 102-103.
K. Okada et al., "A New Polysilicon Process for a Bipolar Device PSA Technology", IEEE Journal of Solid-State Circuits, vol. SC-14 (1979), pp. 307-311.

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