Logic inverter, and a multi-output logic operator derived from t

Details Logic inverter, and a multi-output logic operator derived from t Logic inverter, and a multi-output logic operator derived from t

1981-06-22

1984-11-27

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307450, 307471, 364784, H03K 19017, H03K 19094, H03K 1920, H03K 1921

Patent

active

044853165

ABSTRACT:
A high-speed logic inverter, in the form of an integrated circuit, with a single supply source, using field-effect transistors of the "quasi-normally-off" type, and the logic operators having several inputs and several outputs which derive therefrom.
One embodiment of the invention starts from an inverter with input, through a diode, on a field-effect transistor gate, and with its output at the source of a field-effect transistor. This basic diagram is added to by providing the input (between supply pole and input terminal) with two pairs of diodes ending at the gates of a dual-gate transistor, and by providing independent outputs obtained by connecting the common drain connected transistor gates to the supply pole distinct from ground.

REFERENCES:
patent: 3969632 (1976-07-01), Bobenrieth
patent: 4300064 (1981-11-01), Eden
patent: 4394589 (1983-07-01), Pham et al.
Nuzillat et al., "L.S.I. Oriented Logic Approach Using Quasinormally Off GaAs MESFETs"; IEE Proc., vol. 127, Pt. I, No. 5; pp. 287-296; 10/1980.
Vantuyl et al., "High-Speed Integrated Logic with GaAs MESFETs"; IEEE-JSSC, vol. SC-9, No. 5, pp. 269-276; 10/1974.
Supplement to the Journal of the Japan Society of Applied Physics: Proceedings of the 6th Conference on Solid State Devices, vol. 44, Tokyo 1974/1975; Tokyo (JP); Suzuki et al.: "Logic Circuits with 2 .mu.m Gate Schottky Barrier FETs", pp. 219-224.
Proceedings of the IEEE, vol. 67, No. 3, Mar. 1979; New York (US); B. G. Bosch: "Gigabit Electronics--a Review", pp. 340-379.
IEEE International Solid State Circuit Conference, Feb. 14, 1980, New York (US); R. C. Eden et al.: "Multi-Level Logic Gate Implementation in GaAs ICs using Schottky Diode-FET Logic", pp. 122-123 and 265-266.
IEEE Transactions on Electron Devices, vol. ED-27, No. 6, Jun. 1980, New York (US); G. Nuzillat et al.: "Quasi-Normally-Off MESFET.

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