Logic integrated circuit device formed on compound semiconductor

Details Logic integrated circuit device formed on compound semiconductor Logic integrated circuit device formed on compound semiconductor

1986-05-02

1988-05-10

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307475, 357 22, H03K 1730, H03K 19094, H01L 2980

Patent

active

047439572

ABSTRACT:
A gallium arsenide integrated circuit device compatible with a silicon emitter-coupled logic device includes a plurality of transistors constituting an logic circuit and an output transistor driving an externally provided load in response to an output of the logic circuit. The output transistor has its threshold voltage that is larger in absolute value than the threshold voltages of the remaining transistor, so that an output signal having the ECL level is produced without sacrificing a power consumption and a semiconductor chip area.

REFERENCES:
patent: 4410815 (1983-10-01), Ransom et al.
patent: 4494016 (1985-01-01), Ransom et al.
patent: 4496856 (1985-01-01), Ransom et al.

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