Logic gates including diode-connected...

Details Logic gates including diode-connected... Logic gates including diode-connected...

2006-06-06

2006-06-06

Chin, Stephen (Department: 2634)

Pulse or digital communications

Transceivers

C370S276000, C326S026000

Reexamination Certificate

active

07058121

ABSTRACT:
Logic gates are provided that include a diode-connected metal-oxide-semiconductor field-effect transistor (MOSFET) to produce a gate threshold voltage that differs from a mid-supply voltage level, while providing symmetry in the switching transients of the output logic signals. In one embodiment, the logic gate is a NAND gate. Use of a diode-connected n-type MOSFET in a ground path produces a threshold voltage level higher than the mid-supply voltage level. Use of a diode-connected p-type MOSFET in a supply voltage path produces a threshold voltage level lower than the mid-supply voltage level. In another embodiment, the logic gate is a NOR gate. Use of a diode-connected n-type MOSFET in a ground path produces a threshold voltage level higher than the mid-supply voltage level. Use of a diode-connected p-type MOSFET in a supply voltage path produces a threshold voltage level lower than the mid-supply voltage level.

REFERENCES:
patent: 5859564 (1999-01-01), Sonntag et al.
patent: 6414298 (2002-07-01), Nakajima
patent: 6452428 (2002-09-01), Mooney et al.
U.S. Appl. No. 09/989,580, filed Nov. 2001, Kim et al.
U.S. Appl. No. 09/989,487, filed Nov. 2001, Kim et al.

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