Logic gate with reduced sub-threshold leak current

Details Logic gate with reduced sub-threshold leak current Logic gate with reduced sub-threshold leak current

2008-07-01

2008-07-01

Cox, Cassandra (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Synthesizer

C326S112000

Reexamination Certificate

active

07394297

ABSTRACT:
The logic gate of the present invention is of a configuration that includes a first transistor, a second transistor, and a connection-switching unit. The first transistor receives a first voltage at its source, a first input signal at its gate, and supplies a first output signal from its drain. The second transistor receives a second voltage that is lower than the first voltage at its source, receives a second input signal at its gate, and supplies a second output signal from its drain. The connection-switching unit is connected between the drains of the first transistor and the second transistor for connecting and cutting off the first transistor and the second transistor.

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Sakurai, “Low Power Design of Digital Circuits,” International Symposium on Key Technologies for Future VLSI Systems, Jan. 2001, pp. 1-5.

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