Logic gate having low power consumption

Details Logic gate having low power consumption Logic gate having low power consumption

1986-08-05

1988-07-05

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307450, 307285, H03K 19017, H03K 1716, H03K 19094, H03K 326

Patent

active

047556951

ABSTRACT:
A semiconductor logic circuit device uses a plurality of MESFETs and a Schottky barrier diode (11) interconnected in such a way that one MESFET forms a switching input (9), another MESFET may form a load (8), still another MESFET forms a buffer amplifier stage (10), a further MESFET forms a current source, and the Schottky barrier diode operates as a speed-up capacitor for increasing the response characteristic of the buffer stage. Different types of logic circuits may be formed.

REFERENCES:
patent: 4558235 (1985-12-01), White et al.
Introduction to VLSI Systems, Mead & Conway Copyright 1980 by Addison-Wesley Publishing Company, Inc.

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