Logic device and memory device using ceramic superconducting ele

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 27, 307306, 365160, 505 1, H01L 3922, H01L 2722

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active

050418807

ABSTRACT:
A logic device includes a ceramic superconducting element having magneto-resistive characteristics, and three electrodes provided adjacent the ceramic superconducting element, and constructed in such a manner that a current is applied to one of the three electrode so that a magnetic field greater than a threshold magnetic field is normally applied to the ceramic superconducting element, and the other electrodes are used for increasing and decreasing the magnetic field. A memory device includes a superconducting loop at least one portion thereof being formed by a ceramic superconducting element having grain boundaries, and an electrode provided in approximation to said ceramic superconducting element, whereby a current flowing through a portion of said superconducting loop which is other than said ceramic superconducting element can be captured in said superconducting loop by a control of a magnetic field generated by the current flowing through said electrode.

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Tsuchimoto et al., "Novel Magnetic Sensor . . . ", in IEDM87, Dec. 8, 1987, pp. 867-868.
IBM J. Res., vol. 24, No. 2, Mar. 1980, pp. 113-129, 143-154, 155-166.

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