Logic circuits utilizing a composite junction transistor-MOSFET

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307243, 307529, 307570, 357 43, 357 46, H03K 1902, G06G 701, H01L 2702

Patent

active

048292001

ABSTRACT:
A composite device includes a junction transistor and an MOS transistor in which the channel region of the MOS transistor corresponds to a portion of the base region of the junction transistor. Such a device has a variety of applications in NAND and NOR circuits and as an analog transmission gate useful in a multiplexer.

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