Logic circuit using vertically stacked heterojunction field effe

Details Logic circuit using vertically stacked heterojunction field effe Logic circuit using vertically stacked heterojunction field effe

1991-07-02

1993-09-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257369, 257903, H01L 31072, H01L 31109, H01L 2994, H01L 2711

Patent

active

052432068

ABSTRACT:
Logic circuits using a heterojunction field effect transistor structure having vertically stacked complementary devices is provided. A P-channel quantum well and an N-channel quantum well are formed near each other under a single gate electrode and separated from each other by a thin layer of barrier material. P-source and P-drain regions couple to the P-channel. N-source and N-drain regions couple to the N-channel. The P-source/drain regions are electrically isolated from the N-source/drain regions so the P-channel and N-channel devices may be interconnected to provide many logic functions.

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patent: 5142349 (1992-08-01), Zhu et al.
P. Sercel et al, "Type II Broken-gap quantum wires and quantum Dot arrays-A novel concept for self doping semiconductor Nanostructures," Appl. Phys. left, 57(15) Oct. 1990.
Zhu et al "Excitonic Insulator Transition in Gasb-Alsb-InAs quantum-23ll structures" 75(7) Solid State Communications, 1990.

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