Logic circuit and single-electron spin transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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Details

C257S030000, C257S295000, C257SE29323

Reexamination Certificate

active

07851877

ABSTRACT:
A logic circuit that can reconfigure its functions in a nonvolatile manner and a single-electron transistor to be used in the logic circuits are provided. The logic circuit has a single-electron spin transistor that includes: a source; a drain; an island that is provided between the source and the drain, and has tunnel junctions between the island and the source and drain; and a gate that is capacitively coupled to the island. In this logic circuit, at least one of the source, the drain, and the island includes a ferromagnetic material having a variable magnetization direction.

REFERENCES:
patent: 5838021 (1998-11-01), Ancona
patent: 5877511 (1999-03-01), Tanamoto et al.
patent: 6066867 (2000-05-01), Nakamura
patent: 6787795 (2004-09-01), Uchida et al.
patent: 2004/0238808 (2004-12-01), Fraboulet et al.
patent: A-11-168205 (1999-06-01), None
patent: A-2004-281548 (2004-10-01), None
Tomohiro Matsuno et al.; “Novel Reconfigurable Logic Gates Using Spin Metal-Oxide-Semiconductor Filed-Effect Transistors”;Japanese Journal of Applied Physics; vol. 43; No. 9A, 2004; pp. 6032-6037.
Masaaki Tanaka, “Semiconductor spin-electronics—Current Status and future prospects-”;Applied Physics; vol. 73, No. 4 2004; pp. 514-515.
Marc Pirmann et al.; “Asymmetric tunable tunneling magnetoresistance in single-electron transistors”;Journal of Magnetism and Magnetic Materials; 219; 2000; pp. 104-108.

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