Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-02-02
2010-12-14
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S030000, C257S295000, C257SE29323
Reexamination Certificate
active
07851877
ABSTRACT:
A logic circuit that can reconfigure its functions in a nonvolatile manner and a single-electron transistor to be used in the logic circuits are provided. The logic circuit has a single-electron spin transistor that includes: a source; a drain; an island that is provided between the source and the drain, and has tunnel junctions between the island and the source and drain; and a gate that is capacitively coupled to the island. In this logic circuit, at least one of the source, the drain, and the island includes a ferromagnetic material having a variable magnetization direction.
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Tomohiro Matsuno et al.; “Novel Reconfigurable Logic Gates Using Spin Metal-Oxide-Semiconductor Filed-Effect Transistors”;Japanese Journal of Applied Physics; vol. 43; No. 9A, 2004; pp. 6032-6037.
Masaaki Tanaka, “Semiconductor spin-electronics—Current Status and future prospects-”;Applied Physics; vol. 73, No. 4 2004; pp. 514-515.
Marc Pirmann et al.; “Asymmetric tunable tunneling magnetoresistance in single-electron transistors”;Journal of Magnetism and Magnetic Materials; 219; 2000; pp. 104-108.
Pham Hai Nam
Sugahara Satoshi
Tanaka Masaaki
Japan Science and Technology Agency
Mandala Victor A
Oliff & Berridg,e PLC
Stowe Scott
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