Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-11-21
2006-11-21
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S009000, C257S024000, C257S039000, C257SE29322
Reexamination Certificate
active
07138651
ABSTRACT:
A logic apparatus comprises a first single-electron device formed of a first conductive island, two first tunnel barriers with the first conductive island interposed, first and second electrodes, and a first charge storage region, and a second single-electron device formed of a second conductive island, second tunnel barriers with the second island interposed, third and fourth electrodes, and a second charge storage region, the first electrode of the first single-electron device being connected to the third electrode of the second single-electron device being connected to each other.
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Koga Junji
Ohba Ryuji
Uchida Ken
Kabushiki Kaisha Toshiba
Parker Kenneth
Warren Matthew E.
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