LOCOS type field isolating film and semiconductor memory device

Details LOCOS type field isolating film and semiconductor memory device LOCOS type field isolating film and semiconductor memory device

1991-09-03

1993-08-10

Fourson, George

Fishing, trapping, and vermin destroying

437 69, 437225, H01L 2176

Patent

active

052348598

ABSTRACT:
A LOCOS isolation film is formed on a major surface of a semiconductor substrate. Thereafter, a new surface of the semiconductor substrate is exposed by wet etching. A resist pattern is formed on the exposed new surface. A part of the LOCOS isolation film is removed using this resist pattern, to expose the surface of the semiconductor substrate. This unsymmetrical LOCOS isolation film increases the effective area of the surface of the semiconductor substrate and preserves predetermined dielectric resistance.

REFERENCES:
patent: 4414058 (1983-11-01), Mueller
patent: 4994407 (1991-02-01), Custude et al.
patent: 5001083 (1991-03-01), D'Anna
Ghandhi, S., VLSI Fabrication Principles; Silicon & Gallium Arsenide, 1983, p. 544.

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