Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-09-26
2010-12-21
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000, C257S760000, C257SE23010, C257SE23011
Reexamination Certificate
active
07855455
ABSTRACT:
A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.
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Purushothaman Sampath
Rothwell Mary E.
Shahidi Ghavam Ghavami
Yu Roy Rongqing
Eichelburg Robert J.
International Business Machines - Corporation
Patton Paul E
Smith Zandra
The Law Offices of Robert J. Eichelburg
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