Localized temperature control during rapid thermal anneal

Details Localized temperature control during rapid thermal anneal Localized temperature control during rapid thermal anneal

2007-02-26

2010-06-29

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S424000, C257S510000, C257S532000, C257SE29001, C257SE21540

Reexamination Certificate

active

07745909

ABSTRACT:
Disclosed are embodiments of a semiconductor structure and method of forming the structure with selectively adjusted reflectance and absorption characteristics in order to selectively control temperature changes during a rapid thermal anneal and, thereby, to selectively control variations in device performance and/or to selectively optimize the anneal temperature of such devices. Selectively controlling the temperature changes in different devices during a rapid thermal anneal is accomplished by selectively varying the isolation material thickness in different sections of a shallow trench isolation structures. Alternatively, it is accomplished by selectively varying the pattern of fill structures in different sections of a semiconductor wafer so that predetermined amounts of shallow trench isolation regions in the different sections are exposed.

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