Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1983-01-07
1984-12-11
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29571, 29576E, 29576T, 29577C, 29578, 29580, 148 15, 148174, 148187, 156603, 156612, 156DIG73, 156DIG80, 427 531, 427 86, 427 35, 357 42, 357 49, 357 50, 357 59, H01L 21263, H01L 21428
Patent
active
044876394
ABSTRACT:
A method of forming a semiconductor device having a single crystal silicon substrate, the surface of which includes exposed silicon areas bounded by and coplanar with insulating oxide regions. A polysilicon layer is deposited thereon and annealed to form a single crystal epitaxial region overlying the exposed substrate areas while the regions overlying the oxide areas in the substrate surface may be of polycrystalline form. This structure is applied to NMOS, CMOS, MESFET, and I.sup.2 L devices to achieve high packing density, high speed, improved isolation between devices and reduced susceptibility to latch-up.
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Lam Hon W.
Yuan Ham-Tzong
Comfort James T.
Hiller William E.
Saba William G.
Sharp Melvin
Texas Instruments Incorporated
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