Localized control of integrated circuit parameters using focus i

Details Localized control of integrated circuit parameters using focus i Localized control of integrated circuit parameters using focus i

1998-02-05

2000-08-22

Noland, Thomas P.

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

2504921, 324501, 324765, 43 12, 43 17, 43 18, 43798, H01L 2166, H01L 21265, G21K 500

Patent

active

061071064

ABSTRACT:
A method of localized control of integrated circuit parameters according to the present invention is used to adjust a the threshold voltage of an integrated circuit by irradiating an inoperable area with a focused ion beam such that the determination of the correct threshold voltage is facilitated without having to refabricate the integrated circuit in its entirety.

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Effects of Focused Ion Beam Irradiation on MOS Transistors--Ann Campbell et al., Sandia National Labs; pp. 72, 74, 76, 78 and 80. Jul. 1997 IEEE.
SII Seiko Instruments SMI9800SE; Defect Inspection, Review, and Analysis System; Metron Technology 5 pages by Jul. 1998.
FEI; DualBeam 820, FIB/SEM Workstation for Process Characterization and Yield Enhancement; Jun. 1995 pp. 1-12.

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