Localized anodic thinning

Details Localized anodic thinning Localized anodic thinning

1980-04-22

1981-02-03

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412965, C25F 312, C25F 314

Patent

active

042486831

ABSTRACT:
A protective mask and a method of localized anodic thinning to prevent exsive thinning of an epitaxial layer in the forming of a field effect transistor. A moat exposing the epitaxial layer is provided in the protective mask surrounding a device pattern or group of patterns to be formed in the epitaxial layer by anodic thinning. During the thinning process, the area of the epitaxial layer exposed by the moat becomes fully depleted and cuts off current into the region surrounded by the moat and prevents excessive thinning of the epitaxial layer under the design pattern.

REFERENCES:
patent: 3418226 (1968-12-01), Marinace
patent: 3669858 (1972-06-01), LaBoda
patent: 3678348 (1972-07-01), Reber
patent: 3890215 (1975-06-01), DiLorenzo
patent: 3964156 (1976-06-01), Williams
patent: 4096619 (1978-06-01), Cook, Jr.

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